ADPA7005AEHZ

RF Amplifiers Overview

The ADPA7005AEHZ is a GaAs pHEMT monolithic microwave integrated circuit power amplifier operating from 18 GHz to 44 GHz. It features an integrated temperature-compensated on-chip power detector. Key electrical parameters include a supply voltage of 5 V, supply current of 1.4 A, gain of 15.5 dB, noise figure of 6 dB, P1dB compression point of 31 dBm, and input return loss of 18 dB. The device dissipates 12.33 W of power and operates within a temperature range of -40°C to +85°C.

RF Amplifiers Feature Summary

• Integrates a temperature-compensated on-chip power detector for monitoring.

RF Amplifiers Applications

• Point-to-point radio systems
• Point-to-multipoint radio systems
• Wireless local loop applications

RF Amplifiers Procurement Notes

Verify the specific suffix (R7) against the datasheet to confirm reel packaging requirements. Confirm RoHS compliance status through official manufacturer documentation. Ensure the LCC-HS-18 package footprint matches the design layout. Validate thermal management capabilities for the specified power dissipation in the target application environment.

RF Amplifiers Selection Notes

Select this component when high output power and integrated monitoring are required in the Ka-band spectrum. Compare gain and noise figure specifications against alternative models like the ADPA7006 if lower current consumption is prioritized over maximum output power. Ensure the system can support the 1.4 A supply current requirement.

RF Amplifiers Part Context

This part belongs to the ADPA7005 series of single-channel RF power amplifiers manufactured by Analog Devices Inc. using GaAs pHEMT technology. It is designed for general-purpose wireless applications requiring high linearity and power efficiency in the 18-44 GHz frequency range.

RF Amplifiers Replacement Considerations

The ADPA7006AEHZ offers similar frequency coverage but with different gain and current characteristics. Verify pinout compatibility and thermal requirements before substitution.

RF Amplifiers FAQ

What technology is used in the ADPA7005AEHZ?

It utilizes Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology.

Does the ADPA7005AEHZ include internal monitoring?

Yes, it features an integrated temperature-compensated on-chip power detector.