ADPA7007CHIP

RF Amplifiers Overview

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. It operates within the frequency range of 18 GHz to 44 GHz, delivering an output power of 1 W (31 dBm). The device features a typical supply voltage of 5 V at a maximum current of 1400 mA. It includes 50 Ω matched input and output ports for seamless integration. The die dimensions are 3.610 mm × 3.610 mm × 0.102 mm.

RF Amplifiers Feature Summary

• Utilizes GaAs pHEMT MMIC technology for high-frequency performance
• Provides 50 Ω matched input and output impedance
• Operates with a typical 5 V supply voltage

RF Amplifiers Applications

• Point-to-point radio links
• Satellite communication systems
• Electronic warfare applications

RF Amplifiers Procurement Notes

Verify the specific suffix and package type against the manufacturer's official datasheet to ensure compatibility with your design requirements. Confirm that the component meets all necessary regulatory standards for your target market before finalizing procurement decisions.

RF Amplifiers Selection Notes

Select this component when designing circuits requiring high output power in the K-band and Ka-band ranges. Ensure the application environment supports the specified operating temperature range and that the PCB layout accommodates the bare die form factor for proper thermal management and RF performance.

RF Amplifiers Part Context

This part belongs to Analog Devices' portfolio of wideband MMIC power amplifiers. It is designed for high-performance wireless infrastructure and defense electronics. The device complements other models in the series by offering robust power handling capabilities across a broad microwave spectrum.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers: ADPA7008CHIP, ADPA7009CHIP.