ADS12B3-ASARH

$0.95

Description：DIODE SIL CARBIDE 1200V 1A SMBF
Series：Sanan SMBF
Mfr：Luminus Devices Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e27045964097 Category: Single Diodes Brand: Luminus Devices Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：DIODE SIL CARBIDE 1200V 1A SMBF
Series：Sanan SMBF
Mfr：Luminus Devices Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：1A
Voltage - Forward (Vf) (Max) @ If：1.35 V @ 1 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：8 µA @ 1200 V
Capacitance @ Vr, F：-
Mounting Type：Surface Mount
Package / Case：DO-221AA, SMB Flat Leads
Supplier Device Package：SMBF
Operating Temperature - Junction：-55°C ~ 175°C
Grade：Automotive
Qualification：-

Download product information

ADS12B3-ASARH

Overview

The ADS12B3-ASARH is a third-generation Silicon Carbide Schottky Barrier Diode manufactured by Hunan Sanan Semiconductor. It features a 1200V repetitive peak reverse voltage and operates with a continuous forward current of 1.1A at 135°C. The device utilizes an SMBF package and exhibits no reverse recovery charge, enabling high-speed switching. It supports a junction temperature range from -55°C to 175°C and is AEC-Q101 qualified for automotive applications.

Feature Summary

Utilizes advanced third-generation Silicon Carbide material for superior thermal performance
Schottky barrier structure eliminates reverse recovery time during turn-off
Maintains stable switching behavior independent of temperature variations
Qualified under the AEC-Q101 automotive reliability standard

Applications

DC/DC converters for electric vehicles (EV) and hybrid electric vehicles (HEV)
On-board chargers (OBC) for electrified powertrains

Procurement Notes

Verify that the component originates from Hunan Sanan Semiconductor Co., Ltd., as indicated in the official datasheet. Confirm the specific ordering suffix ASARH corresponds to the Tape & Reel packaging format containing 5000 units per reel. Ensure compliance with RoHS standards and validate suitability for the intended operating temperature range before integration.

Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities up to 1200V combined with low forward voltage drop characteristics. The absence of reverse recovery makes it suitable for high-frequency switching topologies where minimizing switching losses is critical. Consider the SMBF package dimensions and thermal resistance values for proper heat dissipation planning.

Part Context

This part belongs to the ADS12B3 series of Silicon Carbide Schottky Barrier Diodes. It represents a transition from traditional silicon-based solutions to wide-bandgap semiconductors, offering higher efficiency and operation temperatures. The SMBF package provides a compact footprint suitable for modern power electronics designs.