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ADS16B3-ASARH
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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 1A SMBF
- Series：Sanan SMBF
- Mfr：Luminus Devices Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：1A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 1 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：8 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：DO-221AA, SMB Flat Leads
- Supplier Device Package：SMBF
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：Automotive
- Qualification：-
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Overview
The ADS16B3-ASARH is a third-generation 650V Silicon Carbide Schottky Barrier Diode manufactured by Hunan Sanan Semiconductor. It features an SMBF package and operates with a junction temperature range of -55°C to 175°C. Key electrical parameters include a maximum repetitive peak reverse voltage of 650V, a continuous forward current of 2.4A at 25°C, and a typical forward voltage of 1.30V at 1A. The device exhibits a total capacitive charge of 3.2nC and complies with RoHS standards.
Feature Summary
- Utilizes advanced third-generation Silicon Carbide technology for high efficiency and reliability.
- Features zero reverse recovery characteristics due to its Schottky structure.
- Demonstrates temperature-independent switching behavior suitable for high-frequency operation.
- Achieves system size reduction through reduced cooling requirements.
Applications
- DC/DC converters for electric vehicles (EV) and hybrid electric vehicles (HEV)
- On-board chargers (OBC)
Procurement Notes
Verify the manufacturer origin as Hunan Sanan Semiconductor Co., Ltd. rather than Luminus Devices Inc. Confirm the specific ordering suffix ASARH corresponds to the Tape & Reel packing type with a unit quantity of 5000. Ensure compliance with AEC-Q101 qualification requirements for automotive applications.
Selection Notes
Select this component for designs requiring high-temperature stability up to 175°C and low leakage current. Consider the SMBF package dimensions and thermal resistance values when designing heat dissipation paths. Evaluate the 650V blocking capability against circuit voltage spikes to ensure adequate safety margins.
Part Context
This part belongs to the ADS16B3 series of Silicon Carbide Schottky Barrier Diodes. It represents a shift from traditional silicon solutions, offering superior performance in power density and switching speed. The SMBF package provides a compact footprint for surface-mount assembly.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing PCB footprints if considering alternative SMBF packaged SiC diodes from other manufacturers.
