AFGH4L40T120RWD-STD

$6.66

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:38cea8291509 Category: Single IGBTs Brand: onsemi

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Product introduction

AFGH4L40T120RWD-STD is listed in the Single IGBTs range at ChipApex. The manufacturer field lists onsemi. Its product description is IGBT TRENCH FS 1200V 80A TO-247. Review the specifications below when checking this part for your BOM.

Single IGBTs specifications for AFGH4L40T120RWD-STD

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：416 W
Switching Energy：1.56mJ (on), 1.22mJ (off)
Input Type：Standard
Gate Charge：112 nC
Td (on/off) @ 25°C：40.2ns/164ns
Test Condition：600V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)：192 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4L
Grade：Automotive
Qualification：AEC-Q101

Single IGBTs datasheet and documents for AFGH4L40T120RWD-STD

AFGH4L40T120RWD-STD

Single IGBTs Overview

The onsemi AFGH4L40T120RWD-STD is an N-channel Field Stop VII (FS7) IGBT with a Gen7 Diode in a TO-247-4L package. It features a collector-emitter voltage of 1200 V, a typical saturation voltage of 1.67 V at 40 A, and a maximum continuous collector current of 40 A at 100°C. The device supports a maximum junction temperature of 175°C and includes a short-circuit withstand time of 6 µs. Thermal resistance from junction to case is 0.36 °C/W for the IGBT and 0.66 °C/W for the diode.

Single IGBTs Feature Summary

Utilizes extremely efficient trench field stop technology for low on-state voltage and switching losses.
Rated for a maximum junction temperature of 175°C with short-circuit capability.
Features fast switching characteristics and tightened parameter distribution.
AEC-Q101 qualified with PPAP available upon request.

Single IGBTs Applications

Automotive E-compressor
Automotive EV PTC Heater
On-board Charger (OBC)

Single IGBTs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability codes consistent with automotive quality standards. Cross-reference the manufacturer's latest datasheet revision to confirm all electrical parameters match the intended design requirements before finalizing orders.

Single IGBTs Selection Notes

Select this component for hard and soft switching topologies requiring low conduction and switching losses. Evaluate thermal management based on the specified junction-to-case resistance values. Confirm that the gate drive circuitry aligns with the recommended operating conditions for optimal switching performance and reliability within the automotive environment.

Single IGBTs Part Context

This part belongs to the FS7 IGBT family designed for automotive power electronics. It integrates a high-voltage switch with a complementary diode in a single four-lead package. The technology focuses on efficiency improvements over previous generations while maintaining robustness for demanding vehicle applications.

Single IGBTs Replacement Considerations

Check for updated revisions within the same FS7 series. Verify pin compatibility and thermal characteristics when considering alternative packages or manufacturers. Ensure any substitute meets the same AEC-Q101 qualification standards required for the target application.