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Product Detailed Parameters
- Description:DIODE SIC 650V 30A PGTO247341
- Series:CoolSiC™
- Mfr:Infineon Technologies
- Package:Bulk,Tube
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):650 V
- Current - Average Rectified (Io):30A
- Voltage - Forward (Vf) (Max) @ If:1.7 V @ 30 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:120 µA @ 650 V
- Capacitance @ Vr, F:860pF @ 1V, 1MHz
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:PG-TO247-3-41
- Operating Temperature - Junction:-40°C ~ 175°C
- Grade:Automotive
- Qualification:AEC-Q100/101
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Overview
The AIDW30S65C5XKSA1 is a Silicon Carbide Schottky Diode from Infineon Technologies, part of the 5th Generation CoolSiC™ Automotive portfolio. It features a maximum repetitive reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 30 A at a case temperature of 121 °C. The device utilizes a PG-TO247-3-41 package with a junction temperature range of -40 °C to 175 °C. Key electrical parameters include a typical forward voltage (VF) of 1.5 V at 30 A and 25 °C, and a total capacitive charge (QC) of 43 nC at VR=400 V.
Feature Summary
- Automotive qualified product validation according to AEC-Q100/101 standards
- Temperature independent switching behavior with no reverse recovery or forward recovery
- High surge current capability and high dv/dt ruggedness
- System efficiency improvement over silicon diodes due to low figure of merit
Applications
- Traction inverter
- Booster / DCDC Converter
- On board Charger / PFC
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct suffix alignment. Confirm that the component meets the required automotive qualification standards for your specific application environment. Check the latest datasheet revision for any updates to thermal characteristics or maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high reliability and efficiency in the 650V class. The TO-247-3 package facilitates through-hole mounting suitable for high-power density designs. Consider the thermal resistance values when designing heat sinks, as the device supports operation up to 175 °C junction temperature. Ensure gate drive or circuit protection aligns with the specified dv/dt ruggedness limits.
Part Context
This device belongs to Infineon's CoolSiC™ G5 family, designed to complement IGBT and CoolMOS™ portfolios. It represents leading-edge technology based on thin wafers for improved efficiency across all load conditions. The product is specifically engineered to meet stringent requirements in the 650V voltage class for automotive and industrial power conversion systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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