AIDW40S65C5XKSA1

Overview

The AIDW40S65C5 is a 650V, 40A Silicon Carbide Schottky Diode in a PG-TO247-3 package. It features a maximum repetitive reverse voltage of 650 V and a continuous forward current of 40 A at a case temperature of 117 °C. The junction temperature range spans from -40 °C to 175 °C. Key electrical parameters include a typical forward voltage of 1.5 V at 40 A and 25 °C, with a maximum reverse leakage current of 120 µA at 25 °C. The device exhibits a total capacitive charge of 56 nC at 400 V and supports a non-repetitive peak forward current of 1432 A.

Feature Summary

• Utilizes Silicon Carbide material for benchmark switching behavior without reverse or forward recovery.
• Features temperature-independent switching characteristics and high surge current capability.
• Qualified for automotive applications according to AEC-Q100/101 standards.
• Designed for system efficiency improvement and reduced cooling requirements compared to silicon diodes.

Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Procurement Notes

Verify the specific ordering code SP001725204 against the required package variant PG-TO247-3-41. Confirm that the application environment respects the absolute maximum ratings, particularly the junction temperature limit of 175 °C and the wave soldering constraints. Ensure thermal management designs account for the specified thermal resistance values to maintain reliability under continuous operation.

Selection Notes

Select this component for high-frequency and high-power density solutions requiring low figure of merit (Qc x Vf). It is suitable for complementing Infineon’s IGBT and CoolMOS™ portfolios in the 650V class. Consider its robust dv/dt ruggedness and reduced EMI generation when designing circuits where electromagnetic interference is a critical constraint.

Part Context

This device belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It represents Infineon's leading-edge technology for Silicon Carbide Schottky Barrier diodes, utilizing thin wafer technology for improved efficiency across all load conditions. The product line is engineered to meet stringent application requirements within the 650V voltage class.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

Is the AIDW40S65C5 qualified for automotive use?

Yes, the product is qualified for automotive applications and has undergone validation according to AEC-Q100/101 standards.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is 175 °C.