AIKB30N65DF5ATMA1

Single IGBTs Overview

The AIKB30N65DF5ATMA1 is a single N-channel IGBT from Infineon's Trenchstop FS (Field Stop) series, housed in a surface-mount PG-TO263-3 package. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 55 A at 25°C. The device exhibits a saturated collector-emitter voltage of 2.1 V at 15 V gate drive and 30 A collector current. Key switching parameters include a turn-on delay of 25 ns, turn-off delay of 188 ns, and reverse recovery time of 67 ns. Maximum power dissipation is rated at 188 W, with an operating temperature range spanning from -40°C to +175°C junction temperature.

Single IGBTs Feature Summary

• Integrates Trenchstop Field Stop technology for optimized switching performance and low conduction losses.
• Designed for robust operation within a wide thermal range up to 175°C junction temperature.
• Utilizes a leaded D2PAK (PG-TO263-3) surface-mount package for efficient thermal management.

Single IGBTs Applications

• High-frequency DC-DC converters
• Motor control drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Single IGBTs Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix ATMA1 corresponds to the Reel packaging format containing 1000 units per reel. Ensure compatibility with standard SMD reflow soldering profiles for TO-263 packages during assembly planning.

Single IGBTs Selection Notes

Select this component when a 650 V rating and approximately 55 A continuous current capability are required in a compact surface-mount form factor. Consider the 2.1 V saturation voltage for efficiency calculations at nominal loads. Evaluate the 188 W power dissipation limit against the intended heatsinking strategy to maintain junction temperatures within the specified operational range.

Single IGBTs Part Context

This part belongs to the Trenchstop FS family, which combines trench gate and field stop technologies to reduce switching energy compared to older planar designs. The AIKB30N65DF5ATMA1 serves as a discrete switch variant within this lineage, offering higher current density than previous generations while maintaining reliability in industrial power electronics applications.

Single IGBTs Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided documentation. Engineering teams should consult official Infineon cross-reference tools or datasheets for alternative devices with matching electrical characteristics and pin configurations.