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Product Detailed Parameters
- Description：IGBT TRENCH FS 1350V 80A TO-247
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：510 W
- Switching Energy：3mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/95ns
- Test Condition：600V, 30A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
Download product information
Overview
The DIW040F135 is a fast switching Insulated-Gate Bipolar Transistor (IGBT) with an integrated reverse diode, manufactured by Diotec Semiconductor. It utilizes Trench and Fieldstop technology to achieve low saturation voltage and high switching speed. The device features a collector-emitter breakdown voltage of 1350 V and a continuous collector current of 40 A at 25°C. It operates within a junction temperature range of -55°C to +175°C and offers short-circuit proof capability for 10 µs. The component is housed in a TO-247 package and includes typical thermal resistance from junction to case of 0.55 K/W.
Feature Summary
- Trench and Fieldstop Technology
- Fast switching speed
- Parallel operation possible
- Short circuit proof
Applications
- Frequency inverters
- AC and DC Motor drives
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details regarding lead content if required for your assembly process. Ensure the supplier provides the official datasheet matching the exact suffix purchased.
Selection Notes
Select this component for applications requiring high blocking voltage up to 1350 V and moderate current handling around 40 A. Consider the thermal resistance of 0.55 K/W for heatsink design. Evaluate switching energy losses against gate resistor values to optimize efficiency. Verify that the operating frequency aligns with the device's dynamic characteristics for the intended load conditions.
Part Context
This IGBT belongs to Diotec's portfolio of power semiconductors designed for industrial and commercial grade applications. It represents a standard offering utilizing advanced trench gate architecture. The product line supports various voltage classes suitable for medium-power conversion systems. Availability may vary based on the specific automotive or industrial qualification suffix selected.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical parameters such as VCES, IC, and package type. Consult manufacturer guidelines for direct replacements or equivalent technologies.
FAQ
What is the maximum short-circuit withstand time?
The DIW040F135 is short-circuit proof for a duration of 10 µs under specified conditions.
Does the DIW040F135 support parallel operation?
Yes, the datasheet explicitly states that parallel operation is possible for this component.
What packaging format is used for this IGBT?
The component is supplied in tubes or cardboards, packaged in a TO-247 case.
