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The AOD5B65M1 is a 650V, 5A Alpha IGBT in a TO-252 package. It features a collector-emitter saturation voltage of 1.57V at 25°C and 10A. The device includes an integrated anti-parallel diode with a forward voltage of 1.8V at 25°C. Electrical characteristics include a gate threshold voltage of 5.1V and a short-circuit withstand time of 5μs. Thermal resistance from junction to case is 1.8°C/W for the IGBT and 5.5°C/W for the diode. Maximum junction temperature is 150°C.
Verify the exact ordering suffix against official Alpha & Omega Semiconductor documentation to ensure correct packaging and tape/reel specifications. Confirm that the component meets consumer market qualification standards, as critical life support applications are not authorized. Check for any specific handling requirements related to the TO-252 DPAK package during assembly.
Select this component for hard switching applications requiring 650V blocking capability and 5A continuous current. Consider the low VCE(sat) for thermal management in motor drives and home appliances. Ensure the gate drive circuit supports the specified VGE range and that the PCB layout accommodates the TO-252 package dimensions and thermal pad requirements.
This part belongs to Alpha & Omega Semiconductor's AlphaIGBT family, designed specifically for consumer electronics. It combines IGBT switching performance with a fast recovery diode in a single TO-252 package. The series targets cost-sensitive applications like white goods and small motors where efficiency and EMI compliance are critical design constraints.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Engineers should consult official cross-reference lists or contact Alpha & Omega Semiconductor directly for verified equivalent components with matching electrical and thermal parameters.
The maximum short-circuit withstand time is 5 microseconds, provided VGE=15V, VCC≤400V, and TJ≤150°C.
The VCE(sat) increases with temperature; it is 1.57V at 25°C, 1.87V at 125°C, and 1.95V at 150°C when IC=5A.
At TJ=25°C, IF=5A, dI/dt=200A/μs, and VCC=400V, the typical Qrr is 0.24 μC.