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The DIW030M060 is a medium-fast switching IGBT with an integrated reverse diode manufactured by Diotec Semiconductor. It utilizes Trench and Fieldstop technology to achieve low saturation voltage and high efficiency. The device features a collector-emitter breakdown voltage (VCES) of 600 V and a continuous collector current (IC) of 30 A at 100°C case temperature, rising to 60 A at 25°C. Peak collector current reaches 90 A. Power dissipation is rated at 150 W at 25°C case temperature. The component operates within a junction temperature range of -40°C to +150°C and is housed in a TO-247 package.
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details regarding lead content if required for your assembly process. Ensure the supplier provides the official datasheet version matching your design requirements.
Select this component for applications requiring medium switching speeds between 40 kHz and 60 kHz. Consider the thermal resistance values (0.8 K/W for IGBT, 1.4 K/W for diode) during heatsink design. Evaluate the short-circuit withstand time against potential fault conditions in the circuit topology. Verify gate drive voltage levels align with the specified threshold and saturation parameters.
This IGBT belongs to Diotec's power semiconductor portfolio designed for general industrial and commercial switching applications. It serves as a robust solution for inverter stages and DC-AC conversion systems where moderate switching frequencies are utilized. The TO-247 form factor facilitates efficient mounting on heat sinks for thermal management in enclosed environments.
No public confirmed substitute part numbers are documented.