BIDW75N65EH5

Overview

The Bourns BIDW75N65EH5 is a discrete Insulated Gate Bipolar Transistor (IGBT) utilizing Trench-Gate Field-Stop technology. It features a 650 V collector-emitter voltage rating and a continuous collector current of 150 A at 25 °C case temperature, dropping to 75 A at 100 °C. The device operates with a maximum junction temperature of 175 °C and includes an integrated fast recovery diode. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65 V at 75 A and 25 °C, and a total power dissipation of 394 W. The component is housed in a TO-247-3L package.

Feature Summary

• Utilizes novel trench-gate field-stop technology for optimized conduction and reduced switching losses.
• Features high-speed switching capabilities suitable for demanding power electronics applications.
• Includes a built-in fast recovery diode (FRD) for efficient commutation.
• Designed for robust operation with a maximum operating junction temperature of 175 °C.

Applications

• Switched-Mode Power Supplies (SMPS)
• Uninterruptible Power Sources (UPS)
• Power Factor Correction (PFC)
• Inverters
• Photovoltaic systems

Procurement Notes

Verify the specific ordering suffix EH5 to confirm the Extremely High Speed variant and revision control level. Ensure the procurement documentation references the official Bourns datasheet K2540 05/26R for accurate static and dynamic electrical characteristics. Confirm RoHS compliance status against Directive 2015/863 requirements prior to integration into lead-free manufacturing processes.

Selection Notes

Select this IGBT for high-voltage, high-current applications requiring low saturation voltage and fast switching speeds. Consider the thermal resistance values (0.38 °C/W for IGBT, 0.4 °C/W for Diode) when designing heat sinking solutions. Evaluate the pulsed collector current capability of 300 A against potential short-circuit or surge conditions in the target circuit design.

Part Context

This component belongs to the Bourns BID series of discrete IGBTs. The series combines MOS gate technology with bipolar transistor structures to deliver performance in high voltage and high current environments. The BIDW75N65EH5 specifically targets applications needing optimized conduction and high-speed switching within the TO-247-3L form factor.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, match the 650 V rating, 75 A continuous current at elevated temperatures, and TO-247-3L package dimensions. Verify that any replacement maintains comparable switching energy and thermal resistance specifications.

FAQ

What is the maximum gate-emitter voltage allowed for short pulses?

The maximum gate-emitter voltage for pulses with duration tp ≤ 10 µs and duty cycle D < 1% is ±30 V.

How does the continuous collector current change with case temperature?

The continuous collector current is rated at 150 A at a case temperature of 25 °C, but it decreases to 75 A when the case temperature reaches 100 °C.

What is the reverse recovery charge of the integrated diode?

The typical reverse recovery charge (Qrr) is 0.4 µC, measured at a forward current of 75.0 A and a di/dt of 200 A/µs.