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Product Detailed Parameters
- Description：IGBT FIELD STOP 1200V 50A TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
- Power - Max：348 W
- Switching Energy：1.44mJ (on), 550µJ (off)
- Input Type：Standard
- Gate Charge：204 nC
- Td (on/off) @ 25°C：73ns/269ns
- Test Condition：600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The DGTD120T25S1PT is a 1200V Field Stop Trench IGBT manufactured by Diodes Incorporated. It integrates an ultra-soft, fast recovery anti-parallel diode within a TO-247 (Type MC) package. The device features a maximum collector-emitter voltage of 1200V and supports a DC collector current of 50A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.0V at 25A, a typical reverse recovery time of 100ns, and a maximum junction temperature rating of 175°C.
Feature Summary
- Advanced Field Stop Trench IGBT technology for low VCE(sat) and high switching performance
- Ultra-Soft, Fast Recovery Anti-parallel Diode with narrow VF distribution control
- Positive Temperature Coefficient facilitating easy paralleling
- High short circuit withstand capability up to 10µs
Applications
- Motor Drive
- UPS
- Welder
- Solar Inverter
- IH Cooker
Procurement Notes
Verify the component against datasheet DS39659 Rev. 1 - 2 to confirm authenticity. Ensure the TO-247 package matches Type MC dimensions. Check for RoHS compliance and Halogen/Antimony-free status as specified in the manufacturer's documentation. Confirm that the ordering suffix S1PT corresponds to the standard tube packaging configuration.
Selection Notes
Select this component for applications requiring high-voltage switching with integrated freewheeling capabilities. The 1200V rating suits industrial power systems. Evaluate thermal management requirements based on the 0.43°C/W junction-to-case resistance. Consider the 175°C maximum junction temperature for high-efficiency designs. Verify gate drive compatibility with the specified threshold and charge characteristics.
Part Context
This part belongs to the DGT series of Field Stop IGBTs from Diodes Incorporated. It utilizes trench gate technology to optimize conduction and switching losses. The integration of the anti-parallel diode simplifies circuit design by eliminating the need for external components in inductive load applications.
Replacement Considerations
Direct replacements must match the 1200V rating, TO-247 package, and similar current handling. Cross-reference with other manufacturers' 1200V Field Stop Trench IGBTs. Verify pinout compatibility and thermal resistance values before substitution.
FAQ
What is the maximum short circuit withstand time?
The device can withstand a short circuit for up to 10 µs under specified conditions.
Is the anti-parallel diode ultra-fast recovery?
Yes, it features an ultra-soft, fast recovery anti-parallel diode with a typical reverse recovery time of 100ns.
What is the maximum operating junction temperature?
The maximum junction temperature (Tvj) is rated at 175°C.
