DGTD65T15H2TF

$2.42

Description：IGBT FIELD STP 650V 30A ITO220AB
Series：-

SKU:0894c8e68a65 Category: Single IGBTs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IGBT FIELD STP 650V 30A ITO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
Power - Max：48 W
Switching Energy：270µJ (on), 86µJ (off)
Input Type：Standard
Gate Charge：61 nC
Td (on/off) @ 25°C：19ns/128ns
Test Condition：400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)：150 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack, Isolated Tab
Supplier Device Package：ITO-220AB
Grade：-
Qualification：-

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DGTD65T15H2TF

Overview

The DGTD65T15H2TF is a 650V Field Stop IGBT in an ITO220AB package, utilizing advanced trench technology for high ruggedness. It features a positive temperature coefficient for VCE(sat) and a soft, fast recovery anti-parallel diode. Key electrical parameters include a collector-emitter voltage of 650V, DC collector current of 30A at 25°C case temperature, and a maximum junction temperature of +175°C. The device exhibits low EMI and supports short circuit withstand times up to 5µs.

Feature Summary

High ruggedness designed specifically for motor control applications
Positive temperature coefficient for collector-emitter saturation voltage
Integrated very soft and fast recovery anti-parallel diode
Low electromagnetic interference characteristics

Applications

Motor Drive systems

Procurement Notes

Verify the specific ordering suffix TF against official Diodes Incorporated documentation to confirm packaging details. The datasheet indicates a quantity of 1000 per box in tubes, with 50 devices per tube. Ensure compliance with RoHS directives and confirm halogen-free status requirements match project specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage isolation and robust thermal performance up to 175°C. Consider the ITO220AB package dimensions and thermal resistance values when designing heatsinking solutions. Evaluate the switching energy losses and gate charge requirements against the driver capabilities to ensure optimal efficiency and reliability in the target circuit design.

Part Context

This part belongs to Diodes Incorporated's DGTD series of Field Stop IGBTs. These components are engineered for high-performance power switching using trench gate technology. The series emphasizes quality and ruggedness, making it suitable for demanding industrial environments where reliable operation under stress conditions is critical for system longevity.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-referencing pinouts, voltage ratings, and thermal characteristics is essential. Do not assume compatibility with other manufacturers' parts without verifying absolute maximum ratings and electrical parameters against the original specification sheet.

FAQ

What is the maximum short circuit withstand time for this IGBT?

The device supports a short circuit withstand time of 5 µs when VCC is less than or equal to 360V, VGE is 15V, and the junction temperature is +150°C.