AOK30B65M2

AOK30B65M2

$4.07
  • Description:IGBT 650V 60A TO-247
  • Series:Alpha IGBT™

SKU:ce59bf3dbe0b Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 650V 60A TO-247
  • Series:Alpha IGBT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 30A
  • Power - Max:300 W
  • Switching Energy:1.02mJ (on), 410µJ (off)
  • Input Type:Standard
  • Gate Charge:63 nC
  • Td (on/off) @ 25°C:34ns/138ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):339 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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AOK30B65M2

Overview

The AOK30B65M2 is a 650V, 30A Alpha IGBT in a TO-247 package. It features a collector-emitter saturation voltage of 1.66V at 25°C and 2.1V max. The device includes a soft and fast recovery anti-parallel diode with a forward voltage of 1.56V at 25°C. Total gate charge is 63nC, with turn-off energy of 0.41mJ and turn-on energy of 1.02mJ at 175°C. Short-circuit withstand time is 5μs. Thermal resistance junction-to-case is 0.5°C/W for the IGBT and 1°C/W for the diode.

Feature Summary

  • Latest AlphaIGBT technology providing high efficiency through low VCE(SAT) and low switching losses.
  • Integrated soft and fast recovery freewheeling diode designed to minimize reverse recovery effects.
  • High short-circuit ruggedness allowing operation under fault conditions for up to 5 microseconds.
  • Optimized turn-on di/dt controllability and excellent EMI behavior for demanding switching applications.

Applications

  • Motor Drives
  • Servo and General Purpose Inverters
  • Other Hard Switching Applications

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm ordering suffixes match the required package form and compliance standards. Review product qualification status for consumer market suitability before integration into critical systems.

Selection Notes

Select this component for hard switching applications requiring robust short-circuit capability and efficient thermal management. Ensure gate drive parameters align with the specified 15V gate-emitter voltage and 10Ω gate resistance for optimal switching performance and loss characteristics.

Part Context

This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It is designed as a discrete power switch combining an N-channel insulated gate bipolar transistor with an integrated anti-parallel diode in a single TO-247 package.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers without specific cross-reference data.

FAQ

What is the maximum short-circuit withstand time?

The maximum short-circuit withstand time is 5 microseconds, provided the junction temperature remains below 175°C and the supply voltage is within limits.

What is the typical total gate charge?

The typical total gate charge (Qg) is 63 nC, measured under standard test conditions.

Does the device include an integrated diode?

Yes, the AOK30B65M2 includes a soft and fast recovery anti-parallel diode integrated with the IGBT.

AOK30B65M2AOK30B65M2
$4.07
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