SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOK30B65M2 is a 650V, 30A Alpha IGBT in a TO-247 package. It features a collector-emitter saturation voltage of 1.66V at 25°C and 2.1V max. The device includes a soft and fast recovery anti-parallel diode with a forward voltage of 1.56V at 25°C. Total gate charge is 63nC, with turn-off energy of 0.41mJ and turn-on energy of 1.02mJ at 175°C. Short-circuit withstand time is 5μs. Thermal resistance junction-to-case is 0.5°C/W for the IGBT and 1°C/W for the diode.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm ordering suffixes match the required package form and compliance standards. Review product qualification status for consumer market suitability before integration into critical systems.
Select this component for hard switching applications requiring robust short-circuit capability and efficient thermal management. Ensure gate drive parameters align with the specified 15V gate-emitter voltage and 10Ω gate resistance for optimal switching performance and loss characteristics.
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It is designed as a discrete power switch combining an N-channel insulated gate bipolar transistor with an integrated anti-parallel diode in a single TO-247 package.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers without specific cross-reference data.
The maximum short-circuit withstand time is 5 microseconds, provided the junction temperature remains below 175°C and the supply voltage is within limits.
The typical total gate charge (Qg) is 63 nC, measured under standard test conditions.
Yes, the AOK30B65M2 includes a soft and fast recovery anti-parallel diode integrated with the IGBT.