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The DIW040M120 is a medium-fast switching IGBT with an integrated reverse diode manufactured by Diotec Semiconductor. It utilizes Trench and Fieldstop technology to achieve low saturation voltage and fast switching characteristics. The device features a collector-emitter breakdown voltage of 1200 V, a continuous collector current of 40 A at 100°C, and a maximum power dissipation of 330 W. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-247 package.
Verify the specific ordering suffix when sourcing this component. The standard version is designated as commercial or industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes parts currently undergoing automotive qualification. Confirming the exact suffix ensures alignment with the required reliability standards for your specific application environment.
Select this component for designs requiring a 1200 V rating and up to 40 A continuous current. Ensure thermal management accommodates the specified power dissipation limits. Consider the -Q suffix if automotive-grade reliability is mandatory. Verify that the gate drive requirements align with the threshold voltage specifications provided in the datasheet.
This part belongs to Diotec's portfolio of medium-speed IGBTs designed for general-purpose power conversion. It serves as a robust switching element for high-voltage DC systems. The inclusion of an intrinsic anti-parallel diode simplifies circuit topology by eliminating the need for external freewheeling components in many configurations.
Publicly confirmed substitute part numbers are not available in the verified source material.