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The AOB5B65M1 is a 650V, 5A Alpha IGBT in a TO-263 D2PAK package. It features a soft and fast recovery anti-parallel diode. Key electrical parameters include a collector-emitter saturation voltage of 1.57V at 25°C and 5A. The device has a total gate charge of 14nC and a short-circuit withstand time of 5μs. Thermal characteristics specify a junction-to-case resistance of 1.8°C/W for the IGBT and 4.7°C/W for the diode. Maximum power dissipation is 83W at 25°C case temperature.
Verify the specific ordering suffix matches the required packaging format. The datasheet lists AOB5B65M1 as available in Tape & Reel with a minimum order quantity of 800 units. Confirm that the component meets consumer market qualification standards, as critical life support applications are not authorized by the manufacturer.
Select this component for hard switching applications requiring 650V blocking capability and 5A continuous current. Ensure the thermal design accommodates the specified junction-to-case thermal resistances. Verify that the drive circuit can handle the 14nC gate charge and that the operating voltage remains within the 400V test conditions for optimal switching performance.
This part belongs to the Alpha IGBT family from Alpha & Omega Semiconductor. It is the surface-mount TO-263 variant of the AOT5B65M1 through-hole device. Both parts share identical electrical characteristics but differ in package type and standard packaging quantities.
The AOT5B65M1 is the pin-compatible through-hole equivalent. No other direct substitutes are documented in the provided datasheet.
The device supports a short-circuit withstand time of 5μs under conditions of VGE=15V, VCC≤400V, and TJ≤175°C.
The diode forward voltage decreases as junction temperature increases, as shown in the typical electrical characteristics graph relating VF to Temperature.
Standard switching parameter tests are conducted with a gate resistance (RG) of 60Ω.