BIDNW30N60H3

Overview

The Bourns BIDNW30N60H3 is a discrete Insulated Gate Bipolar Transistor (IGBT) utilizing Trench-Gate Field-Stop technology. It features a 600 V collector-emitter voltage rating and a continuous collector current of 60 A at 25 °C case temperature, dropping to 30 A at 100 °C. The device exhibits a typical collector-emitter saturation voltage of 1.65 V at 30 A and 25 °C. Total power dissipation is rated at 230 W with a junction-to-case thermal resistance of 0.54 °C/W for the IGBT section. Operating junction temperature ranges from -55 °C to +150 °C. The component is housed in a TO-247N-3L package.

Feature Summary

• Advanced trench-gate field-stop technology provides greater control of dynamic characteristics while reducing switching losses.
• Low collector-emitter saturation voltage contributes to improved efficiency in high voltage and high current applications.
• Fast switching capability supports high-frequency operation requirements.
• Integrated fast recovery diode (FRD) simplifies circuit design for inductive loads.

Applications

• Switch-Mode Power Supplies (SMPS)
• Uninterruptible Power Sources (UPS)
• Power Factor Correction (PFC)
• Induction heating

Procurement Notes

Verify the specific RoHS compliance status against Directive 2015/863 before procurement, as regulatory updates may occur. Confirm that the TO-247N-3L package dimensions align with your PCB footprint requirements. Ensure gate drive circuits are designed to accommodate the ±20 V maximum gate-emitter voltage rating to prevent device damage during operation.

Selection Notes

Select this component when low conduction loss is critical due to its optimized VCE(sat). Consider the thermal resistance values for heat sink sizing calculations based on expected operating currents. Verify that the application's switching frequency aligns with the device's turn-on and turn-off energy characteristics to maintain efficiency within acceptable limits.

Part Context

This device belongs to the Bourns BID series of discrete IGBTs. The 'NW' suffix indicates the TO-247N-3L packaging style, which offers enhanced thermal performance compared to standard TO-247 packages. The 'H3' designation signifies the high-speed optimization variant within the product line.

Replacement Considerations

Direct replacements must match the 600V rating, TO-247N-3L package, and similar electrical characteristics. Verify pinout compatibility, specifically ensuring the backside tab connects to the collector terminal. Check if alternative devices offer comparable switching speeds and thermal resistance values.