BIDD05N60T

Overview

The Bourns BIDD05N60T is a discrete Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Diode (FRD). It utilizes Trench-Gate Field-Stop technology to optimize conduction and reduce switching losses. The device features a collector-emitter voltage rating of 600 V, a continuous collector current of 10 A at 25 °C, and a maximum power dissipation of 82 W. Packaged in a TO-252 (DPAK) housing, it supports a junction temperature range from -55 °C to +150 °C.

Feature Summary

• Integrates a built-in Fast Recovery Diode within the IGBT package
• Employs novel field stop technology for optimized conduction characteristics
• Provides robust performance with reduced switching losses

Applications

• Switch-Mode Power Supplies (SMPS)
• Uninterruptible Power Sources (UPS)
• Power Factor Correction (PFC)

Procurement Notes

Verify component authenticity by checking the marking code against the datasheet specifications. Confirm RoHS compliance status and ensure the specific ordering suffix matches the required packaging format. Review the manufacturer's legal disclaimers regarding high-risk applications before procurement.

Selection Notes

Select this component for medium-speed switching applications requiring low saturation voltage. Ensure the thermal design accommodates the specified junction-to-case thermal resistance values. Verify that the gate drive requirements align with the ±30 V maximum gate-emitter voltage limits.

Part Context

This part belongs to the Bourns BID series of discrete IGBTs. The series combines MOS gate technology with bipolar transistor structures to handle high voltage and current efficiently. The 'D' in the model number indicates the discrete configuration and TO-252 packaging.

Replacement Considerations

Consult the official Bourns product selector for alternative devices within the BID series. Verify pinout compatibility and electrical ratings when considering substitutes from other manufacturers.