ALD110802SCL

FET, MOSFET Arrays Overview

The ALD110802SCL is a monolithic quad N-channel enhancement mode MOSFET array manufactured using EPAD® CMOS technology. It features a nominal gate threshold voltage of +0.20V and operates within a supply range of 0°C to +70°C. Key electrical parameters include a drain-source breakdown voltage of 10V, continuous drain current of 12mA at VGS=+9.7V, and an on-resistance of 500Ω at VGS=+4.2V. The device offers low input capacitance (2.5pF) and high matching precision with offset voltages as low as 0mV.

FET, MOSFET Arrays Feature Summary

• Factory-matched transistors utilizing EPAD® technology for exceptional electrical characteristic alignment
• Ultra-low power operation capability in the nanowatt region suitable for sub-threshold applications
• Excellent temperature coefficient tracking due to monolithic integration

FET, MOSFET Arrays Applications

• Precision current mirrors and nano-ampere current sources
• High impedance resistor simulators and capacitive probe interfaces
• Differential amplifier input stages and discrete analog switches
• Sample and hold circuits and charge detectors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'SCL' corresponds to the 16-pin SOIC plastic package configuration. Confirm RoHS compliance status via the manufacturer's documentation. Ensure static control procedures are utilized during handling due to ESD sensitivity. Validate that the +0.20V threshold specification meets the design requirements for the intended low-voltage application environment.

FET, MOSFET Arrays Selection Notes

Select this component when precise matching between multiple N-channel MOSFETs is required for analog signal processing. The +0.20V threshold voltage allows for operation at very low supply voltages below standard logic levels. Consider the 500mW power dissipation limit and the 16-SOIC footprint constraints during the PCB layout phase to ensure adequate thermal management.

FET, MOSFET Arrays Part Context

This device belongs to the ALD1108xx/ALD1109xx family of EPAD® Precision Matched Pair MOSFET Arrays. It is designed specifically for low-voltage, small-signal analog applications where traditional MOSFETs may lack sufficient matching or exhibit excessive leakage currents. The EPAD technology enables active programming of threshold values to achieve tight parametric control.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the EPAD® matched pair architecture and the +0.20V threshold specification. Standard discrete MOSFETs cannot replicate the factory-matching and tempco tracking characteristics provided by the monolithic integration of this component.