AM2306NE

AM2306NE

$0.23
  • Description:MOSFET N-CH 30V 3.9A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:c03899e048ed Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 3.9A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:-
  • Package / Case:-

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AM2306NE

Overview

The AM2306NE is an N-channel enhancement mode power MOSFET manufactured by Analog Power Inc. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 5.8A. Its on-resistance is specified as less than 31mΩ at a gate-source voltage of 10V and less than 43mΩ at 4.5V. The component is housed in a surface-mount SOT-23S package.

Feature Summary

  • Advanced trench technology for excellent RDS(ON) and low gate charge
  • High power and current handling capability
  • Surface mount package design

Applications

  • Load switch
  • PWM application

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. or AiT Semiconductor Inc., as datasheets may list both. Confirm the specific suffix 'NE' corresponds to the SOT-23S package variant. Request the official datasheet to validate electrical parameters against your circuit requirements. Ensure compatibility with your PCB footprint and thermal management strategy before finalizing procurement.

Selection Notes

Select this component when a compact N-channel MOSFET with 30V rating and 5.8A current capacity is required. Consider its low on-resistance characteristics for efficiency in load switching and PWM circuits. Verify that the SOT-23S package fits your board space constraints. Compare gate charge specifications if fast switching speeds are critical for your application performance.

Part Context

This part belongs to the family of N-channel enhancement mode power MOSFETs designed for general-purpose switching applications. Similar variants include AM2306N and other devices from manufacturers like GTM CORPORATION offering comparable voltage and current ratings. These components are commonly used in portable electronics and power management systems requiring efficient switching capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

AM2306NEAM2306NE
$0.23
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