AM2334N

$0.13

Description：MOSFET N-CH 30V 4.3A SOT-23
Series：*
Mfr：Analog Power Inc.
Package：Bulk

SKU:e02af7a4fdaa Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4.3A SOT-23
Series：*
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

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AM2334N

Overview

The AM2334N is an N-Channel MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) rating of 30 V and a Gate-Source Voltage (VGS) limit of ±20 V. The device supports a continuous drain current (ID) of 5.7 A at 25°C ambient temperature. Key electrical parameters include a maximum on-resistance (RDS(on)) of 18 mΩ when driven at a gate voltage of 10 V, and 22 mΩ at 4.5 V. The component utilizes a SOT-23 surface-mount package.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction
Designed for fast switching speed applications
Features low thermal impedance for effective heat dissipation

Applications

White LED boost converters
Automotive systems
Industrial DC/DC conversion circuits

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. or Analog Power to ensure authenticity. Confirm the specific package type is SOT-23 and that the electrical ratings match the documented 30 V and 5.7 A specifications. Request official datasheets to validate the RDS(on) values at both 10 V and 4.5 V gate drive conditions before finalizing procurement.

Selection Notes

Select this component for designs requiring a compact N-Channel MOSFET with a 30 V breakdown voltage. The SOT-23 package suits space-constrained layouts. Ensure the application operates within the specified continuous drain current limits and accounts for thermal management requirements associated with the stated power dissipation capabilities in the target environment.

Part Context

This part belongs to the Analog Power MOSFET portfolio, which includes various N-Channel and P-Channel devices. The company focuses on power management solutions using technologies such as trench MOSFETs. These components are engineered for use in consumer electronics, industrial control, automotive, and communication equipment sectors.