ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH -30V 2.8A SOT-23
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：112mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：400mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：474 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The AM2337P is a P-Channel Silicon MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) of -30V and an on-resistance (RDS(on)) of 112 mΩ at VGS = -4.5V. The device supports a continuous drain current (ID) of -2.8A at Ta=25°C. Packaged in SOT-23, it utilizes low RDS(on) trench technology for high efficiency and fast switching speeds.
Feature Summary
- Low thermal impedance copper leadframe design
- High performance trench technology for minimal power loss
- Fast switching speed capabilities
Applications
- White LED boost converters
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the package type is SOT-23 and the channel configuration is P-Channel. Ensure the specific part number matches the -30V rating to avoid confusion with similar models like the AM2339P or AM2340N which have different electrical characteristics.
Selection Notes
Select the AM2337P for applications requiring a compact P-Channel MOSFET with a -30V breakdown voltage. Its 112 mΩ on-resistance makes it suitable for low-power DC-DC conversion tasks where board space is limited. Consider its -2.8A current rating against the specific load requirements of the target circuit design.
Part Context
Analog Power Inc. specializes in power management solutions, including N-channel and P-channel MOSFETs. The company focuses on products with low on-resistance across various packages such as DFN, SO-8, and SOT-23. Their portfolio targets consumer electronics, industrial control, and automotive applications.
Replacement Considerations
The AM2339P is a related P-Channel MOSFET from the same manufacturer but offers a higher current rating of -3.6A and lower on-resistance. Verify if the increased performance of the AM2339P fits within the thermal and spatial constraints of the existing design before substitution.
