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The AM2341P is a P-Channel MOSFET with a Drain-Source Voltage (VDS) rating of -40 V and a Gate-Source Voltage (VGS) limit of ±20 V. It features an On-State Drain Current (ID) of -3.2 A at 25°C, reducing to -2.7 A at 70°C. The Drain-Source On-Resistance (rDS(on)) is 82 mΩ at VGS = -10 V and 130 mΩ at VGS = -4.5 V. Total Gate Charge (Qg) is typically 15 nC. Power Dissipation (PD) is 1.25 W at 25°C and 0.8 W at 70°C. Thermal Resistance Junction-to-Ambient (RTHJA) is 100 °C/W.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. Ensure the component version matches the required specifications for your circuit design. Confirm that the device meets all necessary safety and regulatory standards for the intended application environment before finalizing procurement decisions.
Select this component for applications requiring a compact P-Channel MOSFET with a -40 V rating. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Evaluate the on-resistance values at your specific gate drive voltages to ensure efficiency requirements are met within the operating temperature range.
This device belongs to Analog Power's miniature surface mount MOSFET lineup. It is engineered for lower voltage power management tasks where space constraints are critical. The technology focuses on high cell density to achieve performance metrics suitable for battery-operated consumer electronics and portable computing peripherals.
Check datasheets for alternative P-Channel MOSFETs with compatible -40 V ratings and similar SOT-23 footprints. Verify that substitute parts meet or exceed the required current handling and thermal characteristics for your specific design constraints.
The maximum continuous drain current is -3.2 A at 25°C ambient temperature and -2.7 A at 70°C ambient temperature.
The typical total gate charge (Qg) is 15 nC.