AM2341P-CT

AM2341P-CT

$0.13
  • Description:MOSFET P-CH -40V 3A SOT-23
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Strip

SKU:62df50329a8d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH -40V 3A SOT-23
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Strip
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:384 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:SOT-23

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AM2341P-CT

Overview

The AM2341P is a P-Channel MOSFET with a Drain-Source Voltage (VDS) rating of -40 V and a Gate-Source Voltage (VGS) limit of ±20 V. It features an On-State Drain Current (ID) of -3.2 A at 25°C, reducing to -2.7 A at 70°C. The Drain-Source On-Resistance (rDS(on)) is 82 mΩ at VGS = -10 V and 130 mΩ at VGS = -4.5 V. Total Gate Charge (Qg) is typically 15 nC. Power Dissipation (PD) is 1.25 W at 25°C and 0.8 W at 70°C. Thermal Resistance Junction-to-Ambient (RTHJA) is 100 °C/W.

Feature Summary

  • Utilizes High Cell Density process for low rDS(on) to minimize power loss and conserve energy.
  • Fast switching capability combined with low gate charge for efficient operation.
  • Miniature SOT-23 surface mount package designed to save board space.

Applications

  • Power management in portable products
  • Battery-powered devices such as computers and printers
  • PCMCIA cards
  • Cellular and cordless telephones

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. Ensure the component version matches the required specifications for your circuit design. Confirm that the device meets all necessary safety and regulatory standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring a compact P-Channel MOSFET with a -40 V rating. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Evaluate the on-resistance values at your specific gate drive voltages to ensure efficiency requirements are met within the operating temperature range.

Part Context

This device belongs to Analog Power's miniature surface mount MOSFET lineup. It is engineered for lower voltage power management tasks where space constraints are critical. The technology focuses on high cell density to achieve performance metrics suitable for battery-operated consumer electronics and portable computing peripherals.

Replacement Considerations

Check datasheets for alternative P-Channel MOSFETs with compatible -40 V ratings and similar SOT-23 footprints. Verify that substitute parts meet or exceed the required current handling and thermal characteristics for your specific design constraints.

FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is -3.2 A at 25°C ambient temperature and -2.7 A at 70°C ambient temperature.

What is the typical total gate charge?

The typical total gate charge (Qg) is 15 nC.

AM2341P-CTAM2341P-CT
$0.13
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