AM2358N

Overview

The AM2358N is a single N-Channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 3.1 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 92 mΩ. It is housed in a SOT-23 surface-mount package, designed for efficient power switching applications with low conduction losses.

Feature Summary

• Utilizes high cell density trench process technology to achieve low on-resistance.
• Designed for minimal power loss and reduced heat generation during operation.
• Miniature surface-mount construction suitable for space-constrained PCB layouts.

Applications

• DC-DC converter circuits
• Power management modules
• Battery protection systems

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the specific suffix indicates the standard SOT-23 package variant. Ensure compatibility with required thermal dissipation standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring a 60 V breakdown voltage and moderate current handling up to 3.1 A. The low Rds(on) value makes it suitable for efficiency-critical designs where minimizing conduction loss is a priority. Consider the SOT-23 footprint constraints during layout planning.

Part Context

This part belongs to the Analog Power Inc. lineup of N-Channel MOSFETs. It shares the trench technology platform used across similar voltage ratings in the series. The AM2358N specifically targets general-purpose switching needs within the 60 V class, offering a balance between current capacity and package size.

Replacement Considerations

Check for direct substitutes such as the AM2358N-T1-PF from VBsemi Electronics Co., which shares identical electrical specifications and pinout configuration. Verify package compatibility and thermal characteristics before swapping manufacturers.