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Product Detailed Parameters
- Description：MOSFET P-CH 60V 3.4A SOT-23
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
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Overview
The AM2361P is a single P-channel MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of -200 V and a maximum gate-source voltage (VGS) of 20 V. The device exhibits an on-resistance (RDS(on)) ranging from 2600 mΩ to 2700 mΩ at a gate drive of 10 V with a specified drain current (ID). Key dynamic parameters include a total gate charge (QG) of 2 nC and a continuous power dissipation (PD) capability of 2 W. The component is housed in a TSOP-6 surface-mount package.
Feature Summary
- Supports high-voltage switching applications with a 200 V drain-source rating.
- Optimized for low gate charge to facilitate efficient switching performance.
- Designed for compact surface-mount integration within the TSOP-6 footprint.
Applications
- High-side load switching circuits
- Power management modules requiring P-channel control
- DC-DC converter topologies
Procurement Notes
Verify the specific datasheet revision and electrical tolerances directly with Analog Power Inc. or authorized distributors before implementation. Confirm that the TSOP-6 package dimensions align with the target PCB layout. Ensure thermal management strategies account for the 2 W power dissipation limit under operating conditions.
Selection Notes
Select this component when a P-channel solution is required for voltages up to 200 V in space-constrained designs. The low gate charge makes it suitable for driving from standard logic levels, though the RDS(on) specification indicates suitability for moderate current loads rather than high-power distribution.
Part Context
This part belongs to the Analog Power Inc. discrete semiconductor portfolio, specifically within their field-effect transistor lineup. The manufacturer specializes in providing alternative sourcing options for various electronic components, including MOSFETs designed for general-purpose and specialized power switching roles.
Replacement Considerations
Cross-reference with other P-channel MOSFETs rated for -200 V in TSOP-6 packages. Verify compatibility regarding pinout configuration, gate threshold voltage, and thermal resistance characteristics to ensure functional equivalence in existing circuit designs.
