AM2371P

$0.31

Description：MOSFET P-CH 100V 0.9A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:6292429769bb Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 0.9A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.7 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：385 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AM2371P

Overview

The Analog Power AM2371P is a P-channel enhancement mode MOSFET housed in an SOT-23 package. It features a drain-source voltage rating of -100 V and a continuous drain current of -0.9 A at 25°C, with a pulsed drain current capability of -3 A. The device utilizes low RDS(on) trench technology, achieving a maximum on-resistance of 1.3 Ω at VGS = -4.5 V and ID = -0.8 A. Thermal resistance (RθJA) is rated at 166 °C/W in steady state. Operating junction and storage temperatures range from -55°C to +150°C.

Feature Summary

Low on-state resistance achieved through trench technology
Fast switching speed capabilities
Low thermal impedance design

Applications

PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. or Analog Power Limited (APL). Confirm the specific part number matches the DS_AM2371P_1A datasheet documentation. Ensure the component is intended for general-purpose applications and not for life-support systems where failure could cause personal injury. Validate that the SOT-23 package dimensions align with your PCB footprint requirements.

Selection Notes

Select this component when a compact P-channel switch is required for moderate voltage levels up to 100V. Consider the 1.3 ohm on-resistance at lower gate drive voltages (-4.5V) if driving directly from standard logic levels. Evaluate the thermal performance based on the 166 °C/W junction-to-ambient resistance for your specific power dissipation needs.

Part Context

This component belongs to the family of P-channel MOSFETs designed for surface-mount applications. It serves as a switching element in power management circuits, offering a balance between voltage handling and physical size within the SOT-23 form factor.