AM2376DN

AM2376DN

$0.23
  • Description:MOSFET N-CH 250V 0.35A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:8e6d2cac6740 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET N-CH 250V 0.35A SOT-23
  • Series:*
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:-
  • Package / Case:-

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AM2376DN

Overview

The AM2376DN is a single N-Channel Depletion Mode MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) of 250V and an on-resistance (RDS(on)) of 6 mΩ. The device supports a continuous drain current (ID) of 0.35A and is housed in a SOT-23 surface-mount package.

Feature Summary

  • N-Channel depletion mode operation
  • High voltage capability with 250V rating
  • Low on-resistance for efficient switching
  • Compact SOT-23 surface mount packaging

Applications

  • High-voltage switching circuits
  • Power management modules
  • Load switch applications

Procurement Notes

Verify the specific manufacturer designation, as Analog Power Inc. may be associated with Analog Devices or other entities depending on the source. Confirm the part number matches the exact depletion mode specification and 250V rating before procurement to ensure compatibility with circuit requirements.

Selection Notes

Select this component for applications requiring a normally-on N-Channel MOSFET with high voltage blocking capability. The low RDS(on) value supports efficient power handling in compact designs. Ensure the gate drive logic accommodates depletion mode characteristics rather than standard enhancement mode devices.

Part Context

This component belongs to the discrete semiconductor category, specifically within the field-effect transistor family. It serves as a critical switching element in electronic systems where high voltage isolation and low conduction loss are required in a small form factor.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

AM2376DNAM2376DN
$0.23
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