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Product Detailed Parameters
- Description：MOSFET P-CH -150V 0.9A SOT-23
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：334 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The AM2391P is a single P-channel enhancement mode field-effect transistor manufactured by Analog Power Inc. It features a maximum drain-source voltage of -150 V and a gate-source voltage limit of 20 V. The device exhibits a typical on-resistance of 1200 mΩ at a gate drive of 10 V, with a maximum value of 1300 mΩ. It supports a continuous drain current of 0.9 A and has a total gate charge of 7 nC. Thermal performance includes a power dissipation rating of 1.25 W in the SOT-23 package.
Feature Summary
- Utilizes P-channel enhancement mode technology for high-side switching applications
- Engineered for low gate charge to facilitate fast switching speeds
- Designed with robust avalanche energy capability for inductive load protection
Applications
- High-side load switching circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific datasheet version corresponding to the AM2391P part number before integration. Confirm that the SOT-23 package thermal characteristics align with the system's heat dissipation requirements. Ensure the operating voltage does not exceed the specified -150 V drain-source or 20 V gate-source limits under all transient conditions.
Selection Notes
Select this component when a compact P-channel solution is required for moderate voltage levels up to 150 V. The SOT-23 package suits space-constrained designs where lower current handling around 0.9 A is sufficient. Consider the on-resistance trade-off against the need for minimal gate drive charge in high-frequency switching environments.
Part Context
This component belongs to the Analog Power Inc. discrete semiconductor portfolio, specifically within the P-channel MOSFET category. The product line focuses on providing various voltage and current ratings across multiple standard packages to support diverse electronic design needs.
Replacement Considerations
Cross-reference with other -150V P-channel MOSFETs in the SOT-23 package. Verify pinout compatibility and ensure equivalent electrical parameters such as Rds(on) and Qg are met for direct substitution.
