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The AM4411P is a single P-channel enhancement mode field-effect transistor manufactured by Analog Power Inc. It features a maximum drain-source voltage of -150 V and a gate-source voltage rating of 20 V. The device exhibits a typical on-resistance of 900 mΩ at a gate drive of 10 V, with a maximum value of 1000 mΩ under the same conditions. It supports a continuous drain current of 1.5 A and has a total gate charge of 8 nC. Thermal performance includes a power dissipation capacity of 3.1 W in a SO-8 package.
Verify the specific manufacturer designation when sourcing, as component identifiers may appear across multiple distributor listings. Confirm the package style matches the required PCB footprint before ordering. Ensure that the electrical ratings align with the target circuit's operational limits to prevent overstress. Request the official datasheet to validate the latest revision details and pinout configuration prior to final procurement decisions.
Select this component based on its -150 V breakdown capability and 1.5 A current handling. The SO-8 package offers a compact solution for space-constrained designs. Evaluate the 900 mΩ on-resistance against the system's conduction loss budget. Consider the 8 nC gate charge for driving speed requirements in switching applications.
This part belongs to the Analog Power Inc. MOSFET portfolio, specifically designed for general-purpose switching tasks. The series provides various voltage and current options to accommodate different power levels. The AM4411P targets applications needing moderate voltage isolation with reliable thermal performance in standard surface-mount formats.
Cross-reference with other -150V P-channel MOSFETs in SO-8 packages. Verify pin compatibility and thermal resistance values before substitution.