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Product Detailed Parameters
- Description：MOSFET P-CH 100V 3.2A SO-8
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The AM4419P is a P-channel enhancement mode MOSFET manufactured by Analog Power Inc. It features a -60V drain-source breakdown voltage and a -30V gate-source rating. The device offers a maximum on-resistance of 25 milliohms at a gate drive of 10 volts, supporting a continuous drain current of 18 amperes. Packaged in a TO-220AB format, it provides a power dissipation capacity of 75 watts under case conditions. This component is designed for high-efficiency switching applications requiring robust thermal performance and low conduction losses.
Feature Summary
- High-speed switching capability enabled by optimized internal gate charge characteristics
- Low on-resistance design minimizes conduction losses during operation
- Robust avalanche energy rating ensures reliability under transient load conditions
Applications
- DC-DC converter circuits
- Motor driver bridge configurations
- Power supply output stages
Procurement Notes
Verify the specific suffix codes against the manufacturer datasheet to confirm pinout compatibility and thermal pad specifications. Ensure the ordered variant matches the required package style and lead configuration for your PCB layout. Cross-reference the date code with the latest quality certifications to maintain supply chain integrity.
Selection Notes
Select this component when designing circuits that require a P-channel switch with a minimum 60-volt blocking capability. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the expected current loads. Confirm that the gate drive voltage aligns with the specified threshold for optimal on-state performance.
Part Context
This part belongs to the Analog Power Inc. discrete semiconductor portfolio, focusing on power management solutions. The series includes various voltage and current ratings tailored for industrial and consumer electronics. Analog Power Inc. specializes in cost-effective power transistors for mainstream manufacturing applications.
Replacement Considerations
Consult official substitution guides for direct replacements. Verify pin-to-pin compatibility and electrical parameter margins before integrating alternative sources into existing designs.
