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Product Detailed Parameters
- Description：MOSFET N-CH 30V 22A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7686 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AM4436N is an N-Channel MOSFET manufactured by Analog Power Inc. It features a Drain-to-Source Voltage (VDS) of 30 V and a Gate-to-Source Voltage (VGS) rating of ±20 V. The device supports a continuous drain current (ID) of 22 A at 25°C ambient temperature, reducing to 18 A at 70°C. Pulse drain current (IDM) is rated at 60 A, with a source current (IS) of 5.1 A. It is housed in an 8-SOIC package with a width of 3.90 mm.
Feature Summary
- Single N-Channel MOSFET configuration for power switching applications
- Surface Mount Technology (SMT) compatible 8-SOIC packaging
- Designed for low on-resistance performance within specified thermal limits
Applications
- DC-DC converter circuits
- Power management modules
- Motor control interfaces
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. when sourcing components. Confirm the specific package variant matches the 8-SOIC footprint requirements. Ensure that the electrical ratings align with the system's voltage and current demands before integration into the design.
Selection Notes
Select this component based on its 30 V breakdown voltage and 22 A continuous current capability. Consider the thermal derating curve which reduces current capacity to 18 A at elevated temperatures. The 8-SOIC package size should be evaluated against available PCB real estate constraints.
Part Context
Analog Power Inc. specializes in power management solutions. This discrete MOSFET belongs to their single FET lineup, designed for efficient energy conversion and switching tasks in compact electronic systems requiring reliable semiconductor performance.
Replacement Considerations
Cross-reference with other N-Channel 30 V MOSFETs offering similar 8-SOIC footprints. Verify pin compatibility and ensure equivalent or superior Rds(on) and thermal characteristics are maintained during substitution.
