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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3193 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SO-8
- Package / Case：PowerPAK® SO-8
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Overview
The AM4468N is an N-Channel MOSFET from Analog Power Inc. featuring a Drain-Source Voltage (V_DS) of 60 V and a continuous Drain Current (I_D) of 14 A at 25°C ambient temperature. It utilizes low r_DS(on) trench technology to achieve a maximum on-resistance of 3.1 mΩ at V_GS = 10 V and 4.3 mΩ at V_GS = 4.5 V. The device is housed in an 8-SO surface-mount package with a thermal resistance characteristic supporting efficient heat dissipation.
Feature Summary
- Low on-resistance achieved through trench technology
- Fast switching speed capability
- Low thermal impedance design
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the manufacturer part number against official Analog Power documentation to ensure authenticity. Confirm that the 8-SO package dimensions match your PCB footprint requirements. Check for specific ordering suffixes if available, as they may indicate tape-and-reel packaging or temperature grades. Ensure the component meets the required voltage and current ratings for your specific circuit design before procurement.
Selection Notes
Select this component for applications requiring a 60 V N-Channel MOSFET with high current handling capabilities. The low on-resistance makes it suitable for power management solutions where efficiency is critical. Consider the 8-SO package size for space-constrained designs. Verify gate drive voltage compatibility, as r_DS(on) varies between 10 V and 4.5 V gate thresholds.
Part Context
This component belongs to the Analog Power N-Channel MOSFET family, which offers various voltage and current ratings. The company specializes in power semiconductors with low on-resistance technologies. Similar parts in the lineup include different voltage ratings such as 80 V or 100 V options, packaged in SO-8, DFN, or TO-220 formats depending on power requirements.
Replacement Considerations
Cross-reference with other 60 V N-Channel MOSFETs in the 8-SO package. Ensure equivalent drain-source voltage, continuous drain current, and on-resistance values. Verify pinout compatibility and thermal characteristics. Official substitutes should be confirmed via manufacturer cross-reference tools.
