AM4480N

$0.51

Description：MOSFET N-CH 80V 7.1A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:e19c4a39077b Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 7.1A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：41mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1522 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AM4480N

Overview

The AM4480N is an N-Channel 80-V (D-S) MOSFET manufactured by Analog Power Inc. It features low rDS(on) trench technology, low thermal impedance, and fast switching speed. Key electrical parameters include a drain-source voltage of 80 V, continuous drain current of 7.1 A at TA=25°C, and rDS(on) of 41 mΩ @ VGS = 10V and 57 mΩ @ VGS = 4.5V. The device operates within a junction temperature range of -55 to 150 °C.

Feature Summary

Utilizes low rDS(on) trench technology for enhanced efficiency
Designed with low thermal impedance for effective heat dissipation
Capable of fast switching speeds suitable for high-frequency applications

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard package is Tape & Reel (T1). Confirm lead-free status if required, indicated by the PF suffix in the part number structure. Ensure compatibility with SO-8 packaging dimensions for PCB layout integration.

Selection Notes

Select this component for designs requiring an 80-V N-Channel MOSFET with moderate current handling up to 7.1 A. Consider the 41 mΩ on-resistance at 10V gate drive for low-loss switching. Evaluate thermal management needs based on the specified RθJA of 80 °C/W under steady-state conditions.

Part Context

This component belongs to the Analog Power MOSFET family, specifically designed as an N-Channel enhancement mode device. It is engineered for power switching applications where low conduction losses and rapid switching transitions are critical requirements for system performance.

Replacement Considerations

Cross-reference with other 80-V N-Channel MOSFETs offering similar rDS(on) and ID ratings. Verify pinout compatibility and thermal resistance specifications before substitution to ensure circuit integrity.