AM4490N-CT

$0.54

Description：MOSFET N-CH 100V 5.2A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:1ef7781f2c04 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 5.2A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：92mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.7 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：990 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOIC-8
Package / Case：SOIC-8

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AM4490N-CT

Overview

The AM4490N-CT is an N-Channel MOSFET from Analog Power Inc. featuring a Drain-Source Voltage (VDS) of 100 V and a Gate-Source Voltage (VGS) rating of ±20 V. It utilizes low RDS(on) trench technology, achieving 78 mΩ at VGS = 10 V and 92 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 5.2 A at 25°C and 4.4 A at 70°C, with a pulsed drain current capability of 50 A. Thermal resistance (RθJA) is rated at 80 °C/W. Operating junction and storage temperatures range from -55°C to 150°C.

Feature Summary

Low on-resistance achieved through trench technology
Fast switching speed for efficient power conversion
Low thermal impedance for effective heat dissipation

Applications

PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters

Procurement Notes

Verify the specific datasheet revision and package marking against the official Analog Power documentation before procurement. Confirm that the 'CT' suffix aligns with the required reel or tube packaging specifications. Ensure component authenticity by sourcing directly from authorized distributors or verified supply channels to prevent counterfeit parts.

Selection Notes

Select this component for applications requiring a 100-V breakdown voltage and moderate current handling up to 5.2 A. Evaluate the thermal environment to ensure the 80 °C/W junction-to-ambient resistance meets system cooling requirements. Consider the gate charge characteristics for driving efficiency in high-frequency switching circuits.

Part Context

This part belongs to the Analog Power N-Channel MOSFET family designed for general-purpose power switching. It is manufactured using trench technology to optimize conduction losses while maintaining fast switching performance. The device is intended for surface-mount assembly in compact electronic designs.

Replacement Considerations

Cross-reference with other 100-V N-Channel MOSFETs offering similar RDS(on) and SOA ratings. Verify pinout compatibility and thermal characteristics before substituting.