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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.9A 8SO
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.7A (Ta), 5.2A (Ta)
- Rds On (Max) @ Id, Vgs：31mOhm @ 4.7A, 10V, 52mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V, 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：519pF @ 15V, 604pF @ 15V
- Power - Max：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The AM4512C is a complementary P-channel MOSFET component manufactured by Analog Power Inc. It features a maximum drain-source voltage of -150 V and a maximum gate-source voltage of 20 V. The device exhibits a typical on-resistance of 290 mΩ at a gate drive of -10 V, supporting a continuous drain current of 1.7 A. With a power dissipation rating of 2.1 W in an SO-8 package, it is designed for efficient switching applications requiring low conduction losses and robust thermal performance within standard surface-mount constraints.
Feature Summary
- Complementary dual configuration providing integrated N-channel and P-channel solutions
- Low on-resistance optimized for high-efficiency power switching
- Surface-mount SO-8 package suitable for automated assembly
Applications
- DC-DC converter synchronous rectification
- Motor driver output stages
- Power management load switches
Procurement Notes
Verify the specific manufacturer datasheet for absolute maximum ratings and thermal characteristics before integration. Confirm package pinout compatibility with existing PCB footprints. Ensure supply chain authenticity through authorized distributors to prevent counterfeit components. Review RoHS compliance status for environmental regulations.
Selection Notes
Select this component when a compact complementary pair is required for low-voltage DC-DC applications. Evaluate thermal resistance capabilities against expected power dissipation levels. Compare on-resistance values with alternative packages to balance cost and efficiency requirements for the specific circuit topology.
Part Context
This part belongs to the Analog Power Inc. MOSFET portfolio, specifically designed for general-purpose power switching. It complements other devices in the series offering similar voltage ratings but varying current capacities. The SO-8 format allows for space-constrained designs compared to larger through-hole alternatives.
Replacement Considerations
Direct substitutes include parts from the same family with identical pinouts and electrical specifications. Verify that any replacement maintains the -150 V rating and comparable Rds(on) to ensure circuit performance parity.
