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Product Detailed Parameters
- Description：MOSFET N-CH 30V 16.8A SOIC-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 10.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1456 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOIC-8
- Package / Case：SOIC-8
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Overview
The AM4874N is a single N-channel MOSFET from Analog Power Inc. featuring a 30-V drain-source voltage and a ±20-V gate-source voltage rating. It utilizes low on-resistance trench technology to achieve an rDS(on) of 11 mΩ at VGS = 10V and 12 mΩ at VGS = 4.5V. The device supports a continuous drain current of 16.8 A at 25°C and offers a maximum junction temperature range of -55°C to 150°C. Packaged in an SO-8 format, it provides a thermal resistance (RθJA) of 80 °C/W under steady-state conditions.
Feature Summary
- Low on-resistance trench technology for efficient power conduction
- Fast switching speed capabilities suitable for high-frequency applications
- Low thermal impedance design to facilitate heat dissipation
Applications
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits
Procurement Notes
Verify the exact ordering suffix against official documentation before procurement. Confirm that the specific package variant matches the required footprint. Ensure the component meets all necessary environmental standards for the intended deployment environment. Cross-reference the datasheet revision with the manufacturing batch to guarantee technical consistency.
Selection Notes
Evaluate the 30-V breakdown voltage against the circuit's peak operating requirements. Assess the 11 mΩ on-resistance at VGS = 10V to determine conduction losses. Consider the 80 °C/W thermal resistance for heatsinking or PCB layout planning. Verify compatibility with the system's gate drive voltage levels to ensure optimal performance.
Part Context
This component belongs to the Analog Power N-channel MOSFET family designed for general-purpose switching applications. It is engineered to provide reliable performance in compact surface-mount configurations. The device integrates robust protection features inherent to modern trench MOSFET architectures.
Replacement Considerations
Consult official distributor databases for verified cross-references. Ensure any substitute maintains identical pinout configuration and voltage ratings. Validate thermal characteristics and package dimensions for mechanical fit.
