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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8.9A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：5.3 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：492 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SO-8
- Package / Case：PowerPAK® SO-8
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Overview
The AM4934N is a dual N-channel MOSFET from Analog Power Inc., housed in an SO-8 package. It features a maximum drain-source voltage of 30 V and a gate-source voltage rating of 20 V. The device has a typical on-resistance of 18 mΩ at a gate drive of 10 V with a continuous drain current capacity of 20 A. Thermal performance includes a power dissipation rating of 7 W, while the total gate charge is specified at 26 nC.
Feature Summary
- Dual N-channel configuration for synchronized switching applications
- Low on-resistance to minimize conduction losses
- High current handling capability suitable for power management
Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power distribution switches
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. or KOYUELEC based on specific datasheet editions. Confirm the SO-8 package type and pinout alignment with the target PCB footprint. Ensure the electrical ratings meet the system requirements for voltage and current loads before integration.
Selection Notes
Select this component for designs requiring two matched N-channel switches in a compact surface-mount form factor. Evaluate the thermal resistance and power dissipation limits against the expected operating temperature range. Compare the gate charge specifications with the driving circuit capabilities to ensure efficient switching transitions.
Part Context
This part belongs to a series of dual MOSFETs designed for general-purpose power switching. The family offers various configurations to balance between low on-resistance and fast switching speeds. These components are commonly utilized in portable electronics and industrial control systems where space efficiency is critical.
