AM50N06-15D-CT

$0.46

Description：MOSFET N-CH 60V 51A TO-252 (D-Pa
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:5584e0a70cb3 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 51A TO-252 (D-Pa
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2022 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (D-Pak)
Package / Case：TO-252 (D-Pak)

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AM50N06-15D-CT

Overview

The AM50N06-15D is an N-channel power MOSFET from Analog Power Inc. with a drain-source voltage of 60V and continuous drain current of 51A at 25°C case temperature. It features low on-state resistance, typically 13mΩ at VGS=10V and 18mΩ at VGS=4.5V. The device supports fast switching speeds and includes a maximum junction-to-ambient thermal resistance of 40°C/W. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Utilizes low RDS(on) trench technology for efficient conduction.
Provides low thermal impedance for effective heat dissipation.
Offers fast switching speed suitable for high-frequency applications.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific package type and lead configuration against the datasheet before procurement. Confirm that the ordering suffix matches the required physical dimensions and pinout. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the manufacturer's part number with distributor listings to ensure authenticity.

Selection Notes

Select this component when a 60V N-channel MOSFET with high current handling capability is required. Consider its low on-resistance for minimizing conduction losses in power conversion circuits. Evaluate the thermal performance based on the specified junction-to-ambient resistance for your enclosure design. Ensure the gate drive voltage aligns with the threshold characteristics for optimal switching efficiency.

Part Context

This component belongs to the Analog Power Inc. family of N-channel power MOSFETs designed for general-purpose switching applications. It utilizes trench technology to achieve low on-resistance and fast switching capabilities. The device is intended for use in environments requiring robust performance under varying thermal conditions.

Replacement Considerations

Check for compatible parts with similar voltage ratings, current capacity, and package dimensions. Verify that alternative components meet or exceed the original specifications for on-resistance and thermal resistance. Ensure the replacement part is available from authorized distributors to maintain supply chain reliability.