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The AM60N10-13D is an N-channel enhancement mode MOSFET manufactured by Analog Power Inc. It features a drain-source voltage rating of 100V and a continuous drain current capacity of 51A at case temperature. The device is housed in a surface-mount TO-252 package, designed for thermal efficiency with a power dissipation rating of 50W at case temperature. Key electrical characteristics include a gate-source threshold voltage minimum of 1V under specified test conditions.
Verify the manufacturer part number AM60N10-13D against official Analog Power Inc. documentation to ensure authenticity. Confirm that the component meets RoHS3 compliance standards as indicated in public records. Check for specific date code requirements if traceability is critical for your assembly process. Ensure the TO-252 package type matches your PCB footprint design constraints before finalizing procurement.
Select this component when a 100V N-channel MOSFET with high current capacity is required in a surface-mount form factor. The TO-252 package offers a balance between power handling and board space efficiency. Consider the 51A current rating and 50W thermal dissipation limits relative to your system's cooling capabilities and duty cycle requirements.
This component belongs to the single FET and MOSFET category within Analog Power Inc.'s discrete semiconductor portfolio. It is classified as a standard N-channel power transistor suitable for general-purpose switching applications. The product status is listed as active, indicating ongoing manufacturing and support from the producer.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications carefully if considering alternatives from other manufacturers.