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Product Detailed Parameters
- Description：MOSFET N-CH 30V 9.7A SOIC-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The Analog Power AM6612N is an N-channel enhancement mode MOSFET featuring a 30-V drain-source voltage rating and a ±20-V gate-source voltage limit. It utilizes low on-resistance trench technology to achieve a maximum rDS(on) of 30 mΩ at VGS = 4.5V and 22 mΩ at VGS = 10V. The device supports a continuous drain current of 9.7 A at 25°C, with a pulsed drain current capability of 30 A. Thermal management is facilitated by a junction-to-ambient thermal resistance of 80 °C/W in steady-state conditions.
Feature Summary
- Low on-resistance trench technology for efficient power conduction
- Fast switching speed capabilities suitable for high-frequency applications
- Low thermal impedance design for effective heat dissipation
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific package dimensions against the provided datasheet drawings before finalizing PCB layout. Confirm that the operating temperature range aligns with the -55 to 150 °C specification for your intended environment. Ensure that the gate drive voltage meets the minimum requirements to fully enhance the channel and minimize on-resistance losses during operation.
Selection Notes
Select this component when a compact N-channel solution with a 30-V breakdown voltage is required. Consider the 30 mΩ on-resistance at 4.5V gate drive if driving from standard logic levels. Evaluate the thermal performance based on the 80 °C/W junction-to-ambient rating and ensure adequate copper area is allocated on the PCB to maintain safe operating temperatures under load.
Part Context
This part belongs to the Analog Power discrete semiconductor portfolio, specifically within their N-channel MOSFET lineup. These components are engineered for general-purpose switching applications where efficiency and thermal performance are critical. The AM6612N represents a standard offering designed to replace older generation devices in similar voltage and current classes.
Replacement Considerations
Consult official cross-reference lists or distributor databases for verified substitute part numbers. Ensure any replacement maintains the same 30-V rating, compatible pinout, and equivalent or superior thermal characteristics.
