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Product Detailed Parameters
- Description：MOSFET P-CH 20V 34.7A DFN3X3
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The AM7321P is a P-channel enhancement mode field-effect transistor manufactured by Analog Power Inc. It features a maximum drain-source voltage of -20V and a gate-source voltage rating of ±12V. The device utilizes a DFN3x3 surface-mount package, designed for compact circuit layouts. Key electrical characteristics include a continuous drain current capability and low on-resistance optimized for power switching applications.
Feature Summary
- P-channel MOSFET configuration for high-side or synchronous rectification
- Compact DFN3x3 footprint for space-constrained designs
- Enhanced mode operation with standard logic-level compatibility
Applications
- DC-DC converter output stages
- Battery protection circuits
- Low-voltage load switches
Procurement Notes
Verify the specific suffix (e.g., -T1-PF) against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Ensure the component source matches the intended brand designation, as distribution channels may list variations under different manufacturer names. Confirm RoHS compliance status directly from the supplier documentation prior to integration.
Selection Notes
Select this component when a small form factor is required for low-voltage power management. The DFN3x3 package offers thermal performance suitable for moderate current densities. Evaluate the total gate charge and input capacitance against the driving circuit capabilities to ensure adequate switching speeds without excessive drive requirements.
Part Context
This part belongs to the Analog Power series of single N-channel and P-channel MOSFETs. These components are engineered for general-purpose power switching in portable electronics and industrial control systems. The product line emphasizes high reliability and consistent electrical parameters across various package types including SOT-23 and DFN configurations.
Replacement Considerations
Cross-reference with other P-channel MOSFETs in the DFN3x3 package having comparable VDS and RDS(on) values. Verify pinout compatibility before substitution. Check if alternative manufacturers offer equivalent thermal resistance and gate threshold voltage specifications.
