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Product Detailed Parameters
- Description：MOSFET N-CH 60V 70A DFN3x3
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The AM7326N is an N-channel MOSFET featuring a 60-V drain-source voltage rating and a ±20-V gate-source voltage limit. It supports a continuous drain current of 20 A at 25°C ambient temperature, reducing to 15 A at 70°C. The device utilizes low rDS(on) trench technology, achieving 5.7 mΩ at VGS = 10V and 9.2 mΩ at VGS = 4.5V. Thermal resistance ratings include a maximum junction-to-case value of 2 °C/W and a junction-to-ambient value of 81 °C/W. Operating temperatures range from -55°C to 150°C.
Feature Summary
- Low on-state resistance achieved through trench technology
- Fast switching speed capabilities
- Low thermal impedance design
Applications
- Automotive Systems
- DC/DC Conversion Circuits
- Motor Drives
Procurement Notes
Verify the specific package type against your PCB footprint requirements before ordering. Confirm that the component meets all necessary safety standards for your intended application environment. Review the manufacturer's datasheet thoroughly to ensure proper handling and storage conditions are maintained throughout the supply chain process.
Selection Notes
Select this component when a 60-V N-channel MOSFET with high current capability is required. Consider the thermal management needs based on the specified junction-to-ambient resistance. Evaluate the gate charge characteristics to determine driver compatibility for efficient switching performance in power conversion applications.
Part Context
This part belongs to the Analog Power MOSFET family, specifically designed for power switching applications. It is manufactured using advanced trench technology to minimize conduction losses. The device is housed in a DFN3x3-8L package, suitable for surface-mount assembly processes in compact electronic designs.
Replacement Considerations
Consult official distributor databases or manufacturer cross-reference tools to identify verified substitute components. Ensure any replacement matches the original voltage, current, and thermal specifications exactly.
