AM7328N

$0.74

Description：MOSFET N-CH 80V 50A DFN3X3
Series：*
Mfr：Analog Power Inc.
Package：Bulk

SKU:61b80b0bda22 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 50A DFN3X3
Series：*
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

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AM7328N

Overview

The AM7328N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 80 V and a Gate-Source Voltage (VGS) limit of ±20 V. It features a low on-state resistance (rDS(on)) of 7.5 mΩ at VGS = 10 V and 12 mΩ at VGS = 4.5 V. The device supports a continuous drain current (ID) of 50 A at TC=25°C, decreasing to 18 A at TA=25°C. Maximum junction-to-case thermal resistance (RθJC) is 2.0 °C/W, while junction-to-ambient (RθJA) reaches 81 °C/W. Operating temperatures range from -55°C to 150°C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Provides low thermal impedance for effective heat dissipation.
Offers fast switching speed suitable for high-frequency applications.

Applications

LED Inverter Circuits
DC/DC Conversion Circuits
Motor drives

Procurement Notes

Verify the specific package type against design requirements, as datasheets may list multiple options. Confirm that the manufacturer's preliminary status does not impact long-term availability or final electrical tolerances. Ensure all absolute maximum ratings are respected during circuit operation to prevent device failure.

Selection Notes

Select this component when an 80-V rating and low on-resistance are required for power management tasks. Evaluate the thermal performance based on the specific PCB layout, as RθJA varies significantly with surface area. Consider gate drive voltage levels, as rDS(on) increases noticeably below 10 V.

Part Context

This part belongs to the Analog Power Inc. lineup of N-Channel enhancement mode power field-effect transistors. These devices are engineered using planar stripe DMOS technology to minimize on-state resistance and improve switching performance. They are designed to withstand high energy pulses in avalanche and commutation modes.