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Product Detailed Parameters
- Description：MOSFET N-CH 30V 19A DFN3X3
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1835 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The AM7338N is an N-Channel Power Enhancement Mode MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of 20 V. The device supports a continuous drain current (ID) of 19 A at ambient temperature and offers a typical on-resistance (RDS(on)) of 3.5 mΩ. Designed for surface-mount applications, it utilizes an 8-DFN (3x3) package with a thermal dissipation capacity of 3.5 W at ambient conditions.
Feature Summary
- N-Channel enhancement mode construction
- Low on-resistance for efficient power switching
- Surface-mount compatible packaging
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific datasheet version from Analog Power Inc. to confirm exact electrical limits and thermal characteristics. Ensure the ordering part number matches the required package style and pin configuration. Cross-reference specifications with system requirements before finalizing procurement decisions.
Selection Notes
Select this component for low-voltage, high-current applications requiring compact surface-mount solutions. Evaluate thermal performance constraints based on the specified power dissipation rating. Compare on-resistance values against alternative devices to optimize efficiency in power conversion designs.
Part Context
Analog Power Inc. specializes in power management semiconductors, including N-Channel and P-Channel MOSFETs. The company provides components designed for various industrial and consumer electronics applications, focusing on optimizing performance through low on-resistance technologies across multiple package types.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Ensure any replacement maintains compatibility with the 30 V drain-source voltage and 20 V gate-source voltage ratings while fitting the 8-DFN (3x3) footprint.
