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Product Detailed Parameters
- Description：MOSFET P-CH -40V 35A DFN3X3
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The AM7341P is a P-Channel MOSFET manufactured by Analog Power Inc., designed for surface-mount applications. It features a drain-source voltage rating of 40 V and supports a continuous drain current of 12 A at ambient temperature. The device utilizes a high cell density trench process to achieve low on-resistance, with a maximum R_DS(on) of 3.5 Ω at V_GS = -10 V. Packaged in an 8-DFN (3x3) case, it offers a thermal resistance (R_thJA) of 62.5 K/W and operates within a junction temperature range up to 150 °C.
Feature Summary
- Utilizes high cell density trench process technology
- Logic level gate drive capability
- Surface-mount construction for dense PCB layouts
Applications
- Power management circuits
- Load switching applications
- DC-DC converter topologies
Procurement Notes
Verify the manufacturer designation carefully, as Analog Power Inc. is distinct from major semiconductor brands like Texas Instruments or Diodes Inc. which also appear in search results for similar numeric codes. Confirm the specific package type (8-DFN 3x3) and electrical ratings against the official datasheet before integration. Ensure compatibility with your supply chain requirements regarding component availability and lifecycle status.
Selection Notes
Select this component when a compact P-Channel solution is required for low-voltage switching tasks. The 40 V rating suits systems operating below this threshold. Consider the 12 A current capacity and thermal performance in your layout design. Compare against alternatives if higher voltage or lower on-resistance is needed for your specific power dissipation constraints.
Part Context
This part belongs to the single FET MOSFET category from Analog Power Inc. It is distinct from the LM7341 operational amplifier series by Texas Instruments and the AP7341 LDO regulator series by Diodes Inc., which share similar numerical identifiers but serve entirely different electronic functions and belong to different manufacturers.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the official datasheet for recommended equivalents or perform a pin-compatible and parameter-matched substitution analysis using other P-Channel MOSFETs with comparable 40 V/12 A specifications.
