AM7352N

$0.92

Description：MOSFET N-CH 40V 44A DFN3X3
Series：*
Mfr：Analog Power Inc.
Package：Bulk

SKU:5f6ae0077d40 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 44A DFN3X3
Series：*
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

Download product information

AM7352N

Overview

The AM7352N is an N-Channel MOSFET featuring a 40-V drain-source voltage rating and a 10-mΩ on-resistance at VGS = 10V. It supports a continuous drain current of 44 A at TC=25°C and a pulsed drain current of 60 A. The device operates within a junction temperature range of -55°C to 150°C, utilizing low rDS(on) trench technology for efficient power switching.

Feature Summary

Low thermal impedance design
Fast switching speed capability

Applications

DC/DC Conversion
Power Routing
Motor Drives

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. against official documentation, as this entity name may differ from standard industry records. Confirm the package type is DFN3x3-8L and validate all electrical parameters directly with the provided datasheet before integration into designs.

Selection Notes

Select this component for applications requiring high current handling in compact footprints. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Evaluate thermal management requirements based on the junction-to-ambient resistance ratings under expected load conditions.

Part Context

This part belongs to the category of N-Channel MOSFETs designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds, suitable for modern power electronics where efficiency and thermal performance are critical constraints.