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Product Detailed Parameters
- Description：MOSFET N-CH 100V 20A DFN3x3
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：22W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN3x3
- Package / Case：DFN3x3
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Overview
The AM7356N is an N-Channel MOSFET with a drain-source voltage rating of 100 V. It features low on-resistance achieved through trench technology, providing 38 mΩ at VGS = 10 V and 50 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 20 A at 25°C case temperature and 7.9 A at 25°C ambient temperature. It operates within a junction temperature range of -55°C to 150°C. The component utilizes a DFN3x3-8L package.
Feature Summary
- Low rDS(on) trench technology for reduced power loss
- Fast switching speed capabilities
- Low thermal impedance design
Applications
- LED Inverter Circuits
- DC/DC Conversion Circuits
- Motor drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the requested part number matches the preliminary datasheet version DS_AM7356N_1B. Ensure compatibility with the specified DFN3x3-8L footprint during procurement planning.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with efficient conduction characteristics. Evaluate the thermal resistance ratings relative to the expected ambient conditions and duty cycles. Consider the gate charge parameters when designing drive circuits to optimize switching performance and minimize driver losses.
Part Context
This component belongs to the Analog Power MOSFET family designed for power management applications. It integrates advanced trench process technology to deliver high cell density. The device is engineered to provide minimal heat dissipation requirements while maintaining robust electrical performance in compact surface-mount packages.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering equivalent parts from other manufacturers.
