AM7450N-CT

$0.87

Description：MOSFET N-CH 60V 20A DFN5x6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:c9782d336c8c Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 20A DFN5x6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.7mOhm @ 13.1A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5861 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN5x6
Package / Case：DFN5x6

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AM7450N-CT

Overview

The Analog Power AM7450N is an N-channel MOSFET featuring a 60-V drain-source voltage rating and a maximum junction temperature of 150°C. It utilizes low on-resistance trench technology, offering a typical rDS(on) of 8.2 mΩ at VGS = 10V and 11.7 mΩ at VGS = 4.5V. The device supports a continuous drain current of 20 A at 25°C and handles a pulsed drain current of 80 A. Thermal resistance from junction to ambient is rated at 65°C/W in steady-state conditions.

Feature Summary

Low on-resistance trench technology for efficient power handling
Fast switching speed capabilities
Low thermal impedance design

Applications

White LED boost converters
Automotive systems
Industrial DC/DC conversion circuits

Procurement Notes

Verify the specific package configuration and manufacturing lot details against the latest official datasheet before procurement. Confirm that the component meets all required electrical thresholds for your specific circuit environment. Ensure compliance with safety standards regarding unauthorized applications, as the manufacturer disclaims liability for life-support or surgical implant uses.

Selection Notes

Select this component based on its 60-V voltage rating and low on-resistance characteristics suitable for high-efficiency switching applications. Evaluate the thermal management requirements against the 65°C/W junction-to-ambient resistance rating. Consider the gate charge parameters for driving efficiency in high-frequency converter designs.

Part Context

This part belongs to the Analog Power discrete semiconductor portfolio, specifically designed for power switching applications. It represents a standard N-channel enhancement mode field-effect transistor utilizing advanced trench architecture to minimize conduction losses while maintaining robust thermal performance under varying load conditions.

Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to guarantee compatibility with existing board layouts and thermal profiles.