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Product Detailed Parameters
- Description：MOSFET N-CH 150V 8.3A DFN5x6
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
- Rds On (Max) @ Id, Vgs：54mOhm @ 6.4A, 5.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 5.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4388 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5x6
- Package / Case：DFN5x6
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Overview
The Analog Power AM7490N is an N-Channel MOSFET featuring a 150V drain-source voltage and ±20V gate-source voltage rating. It utilizes low on-resistance trench technology, offering a maximum rDS(on) of 48mΩ at VGS=10V and 54mΩ at VGS=5.5V. The device supports a continuous drain current of 8.3A at 25°C and a pulsed drain current of 50A. Operating within a junction temperature range of -55°C to 150°C, it provides a thermal resistance (RθJA) of 65°C/W in a DFN5X6-8L package.
Feature Summary
- Employs low on-resistance trench technology for efficient conduction
- Features fast switching speed capabilities
- Provides low thermal impedance for effective heat dissipation
Applications
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact packaging or tape-and-reel specifications. Confirm that the component meets all required electrical parameters for your specific circuit design before procurement. Ensure compatibility with the DFN5X6-8L package dimensions during PCB layout planning.
Selection Notes
Select this component for applications requiring high-voltage handling up to 150V with moderate current demands around 8.3A. Consider the thermal performance and package size when designing for space-constrained environments. Evaluate the gate charge requirements to ensure compatible driver capability for optimal switching efficiency.
Part Context
This part belongs to the Analog Power MOSFET lineup, specifically designed for power switching applications. It represents a single N-channel discrete semiconductor device intended for integration into larger power management circuits. The manufacturer provides detailed electrical characteristics and thermal data to support system-level design validation.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference key parameters such as VDS, ID, rDS(on), and package type when evaluating potential replacement components to ensure functional equivalence.
